High field stress at and above room temperature in 2.3 nm thick oxides. - Damien Zander; Christian Petit; F. Saigné; A. Meinertzhagen (Microelectron. Reliab., 2001)

Contribution of oxide traps on defect creation and LVSILC conduction in ultra thin gate oxide devices. - Damien Zander; F. Saigné; A. Meinertzhagen; Christian Petit (Microelectron. Reliab., 2003)

Low voltage SILC and P- and N-MOSFET gate oxide reliability. - Christian Petit; A. Meinertzhagen; Damien Zander; O. Simonetti; M. Fadlallah; T. Maurel (Microelectron. Reliab., 2005)

Low voltage stress induced leakage current and time to breakdown in ultra-thin (1.2-2.3nm) oxides. - Christian Petit; Damien Zander (Microelectron. Reliab., 2007)

Stress induced gate-drain leakage current in ultra-thin gate oxide. - Christian Petit; Damien Zander (Microelectron. Reliab., 2007)