Effects of inhomogeneous negative bias temperature stress on p-channel MOSFETs of analog and RF circuits. - Christian Schlünder; Ralf Brederlow; Benno Ankele; Wolfgang Gustin; Karl Goser; Roland Thewes (Microelectron. Reliab., 2005)

Practical aspects of reliability analysis for IC designs. - Thomas Pompl; Christian Schlünder; Martina Hommel; Heiko Nielen; Jens Schneider (DAC, 2006)

New insights on the PBTI phenomena in SiON pMOSFETs. - Karina Rott; Hans Reisinger; Stefano Aresu; Christian Schlünder; Klaus Kölpin; Wolfgang Gustin; Tibor Grasser (Microelectron. Reliab., 2012)

Degradation and recovery of variability due to BTI. - Christian Schlünder; Jörg Berthold; Fabian Proebster; Andreas Martin 002; Wolfgang Gustin; Hans Reisinger (Microelectron. Reliab., 2016)

Fast acquisition of activation energy maps using temperature ramps for lifetime modeling of BTI. - Katja Puschkarsky; Hans Reisinger; Christian Schlünder; Wolfgang Gustin; Tibor Grasser (ESSDERC, 2018)

NBTI: Experimental investigation, physical modelling, circuit aging simulations and verification. - Christian Schlünder; Katja Puschkarsky; Gunnar Andreas Rott; Wolfgang Gustin; Hans Reisinger (Microelectron. Reliab., 2018)

From Device Aging Physics to Automated Circuit Reliability Sign Off. - Christian Schlünder; Katja Waschneck; Peter Rotter; Susanne Lachenmann; Hans Reisinger; Franz Ungar; Georg Georgakos (IRPS, 2019)

Efficient Evaluation of the Time-Dependent Threshold Voltage Distribution Due to NBTI Stress Using Transistor Arrays. - Christian Bogner; Tibor Grasser; Michael Waltl; Hans Reisinger; Christian Schlünder (IRPS, 2022)

Modeling of NBTI Induced Threshold Voltage Shift Based on Activation Energy Maps Under Consideration of Variability. - Christian Bogner; Christian Schlünder; Michael Waltl; Hans Reisinger; Tibor Grasser (IRPS, 2023)