Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by Plasma-Assisted Molecular Beam Epitaxy. - Andrea Corrion; Christiane Poblenz; Patrick Waltereit; Tomás Palacios; Siddharth Rajan; Umesh K. Mishra; Jim S. Speck (IEICE Trans. Electron., 2006)