Design for millimeter-wave applications in silicon technologies. - Andreia Cathelin; Baudouin Martineau; N. Seller; S. Douyere; Jean Gorisse; Sébastien Pruvost; Christine Raynaud; Frederic Gianesello; Sébastien Montusclat; Sorin P. Voinigescu; Ali M. Niknejad; Didier Belot; et al. (ESSCIRC, 2007)

High voltage devices in advanced CMOS technologies. - Raúl Andrés Bianchi; Christine Raynaud; Floria Blanchet; Frederic Monsieur; Olivier Noblanc (CICC, 2009)

A 60GHz power amplifier with 14.5dBm saturation power and 25% peak PAE in CMOS 65nm SOI. - Alexandre Siligaris; Yasuhiro Hamada; Christopher Mounet; Christine Raynaud; Baudouin Martineau; Nicolas Deparis; Nathalie Rolland; Muneo Fukaishi; Pierre Vincent (ESSCIRC, 2009)

A 60 GHz Power Amplifier With 14.5 dBm Saturation Power and 25% Peak PAE in CMOS 65 nm SOI. - Alexandre Siligaris; Yasuhiro Hamada; Christopher Mounet; Christine Raynaud; Baudouin Martineau; Nicolas Deparis; Nathalie Rolland; Muneo Fukaishi; Pierre Vincent (IEEE J. Solid State Circuits, 2010)

A 6.7-ENOB, 500-MS/s, 5.1-mW dynamic pipeline ADC in 65-nm SOI CMOS. - Ray Nguyen; Christine Raynaud; Andreia Cathelin; Boris Murmann (ESSCIRC, 2011)

Comparison of 65nm LP bulk and LP PD-SOI with adaptive power gate body bias for an LDPC codec. - Julien Le Coz; Philippe Flatresse; Sylvain Engels; Alexandre Valentian; Marc Belleville; Christine Raynaud; Damien Croain; Pascal Urard (ISSCC, 2011)