Modeling the temperature dependence of sheet and contact resistances in SiGe: C HBTs from 4.3 to 423 K. - Xiaodi Jin; Christoph Weimer; Yaxin Zhang; Michael Schröter (BCICTS, 2020)

Augmented Drift-Diffusion Transport for the Simulation of Advanced SiGe HBTs. - Markus Müller; Michael Schröter; Christoph Jungemann; Christoph Weimer (BCICTS, 2021)

An Experimental Load-Pull Based Large-Signal RF Reliability Study of SiGe HBTs. - Christoph Weimer; Paulius Sakalas; Markus Müller; Gerhard G. Fischer; Michael Schröter (BCICTS, 2021)

Thermal impedance of SiGe HBTs: Characterization and modeling. - Xiaodi Jin; Guangsheng Liang; Yves Zimmermann; Gerhard Fischer; Christoph Weimer; Mario Krattenmacher; Yaxin Zhang; Michael Schröter (BCICTS, 2022)

Characterization of Dynamic Large-Signal Operating Limits and Long-Term RF Reliability of SiGe HBTs. - Christoph Weimer; Xiaodi Jin; Gerhard G. Fischer; Michael Schröter (BCICTS, 2022)

Numerical Device Simulation Aided Study of RF-Stress-Caused Degradation in SiGe HBTs. - Christoph Weimer; Viktor Kazantsev; Markus Mäller; Michael Schröter (BCICTS, 2023)

Nonlinear Compact Modeling of InP/InGaAs DHBTs with HICUM/L2. - Markus Müller; Christoph Weimer; Michael Schröter (ESSDERC, 2023)

On the Safe Operating Area of InP HBTs. - Markus Müller; Sébastien Fregonese; Christoph Weimer; Guangsheng Liang; Xiaodi Jin; Maximilian Froitzheim; Thomas Zimmer; Michael Schröter (BCICTS, 2024)