Low frequency drain noise comparison of AlGaN/GaN HEMT's grown on silicon, SiC and sapphire substrates. - Arnaud Curutchet; Nathalie Malbert; Nathalie Labat; André Touboul; Christophe Gaquière; A. Minko; Michael J. Uren (Microelectron. Reliab., 2003)

Hot carrier aging degradation phenomena in GaN based MESFETs. - Fabiana Rampazzo; Roberto Pierobon; D. Pacetta; Christophe Gaquière; Didier Théron; Bertrand Boudart; Gaudenzio Meneghesso; Enrico Zanoni (Microelectron. Reliab., 2004)

Traps centers and deep defects contribution in current instabilities for AlGaN/GaN HEMT's on silicon and sapphire substrates. - Nabil Sghaier; M'Hamed Trabelsi; Noureddine Yacoubi; Jean-Marie Bluet; Abdelkader Souifi; Gérard Guillot; Christophe Gaquière; J. C. DeJaeger (Microelectron. J., 2006)

Deep levels and nonlinear characterization of AlGaN/GaN HEMTs on silicon carbide substrate. - Malek Gassoumi; Jean-Marie Bluet; Christophe Gaquière; Gérard Guillot; Hassen Maaref (Microelectron. J., 2009)

Characterization of the self-heating of AlGaN/GaN HEMTs during an electrical stress by using Raman spectroscopy. - Fanny Berthet; Yannick Guhel; Hamid Gualous; Bertrand Boudart; Jean-Lionel Trolet; Marc Piccione; Christophe Gaquière (Microelectron. Reliab., 2011)

Annihilation of electrical trap effects by irradiating AlGaN/GaN HEMTs with low thermal neutrons radiation fluence. - Fanny Berthet; Yannick Guhel; Hamid Gualous; Bertrand Boudart; Jean-Lionel Trolet; Marc Piccione; Christophe Gaquière (Microelectron. Reliab., 2012)

A 10-MHz GaN HEMT DC/DC Boost Converter for Power Amplifier Applications. - Florent Gamand; Ming Dong Li; Christophe Gaquière (IEEE Trans. Circuits Syst. II Express Briefs, 2012)

1-20 Ghz kΩ-range BiCMOS 55 nm reflectometer. - Pietro M. Ferreira; Cora Donche; Kamel Haddadi; Tuami Lasri; Gilles Dambrine; Christophe Gaquière; Thomas Quemerais; Daniel Gloria (NEWCAS, 2014)

Characterization and analysis of electrical trap related effects on the reliability of AlInN/GaN HEMTs. - Sébastien Petitdidier; Fanny Berthet; Yannick Guhel; Jean-Lionel Trolet; Philippe Mary; Christophe Gaquière; Bertrand Boudart (Microelectron. Reliab., 2015)

450 GHz fT SiGe: C HBT Featuring an Implanted Collector in a 55-nm CMOS Node. - Alexis Gauthier; Julien Borrel; Pascal Chevalier 002; Grégory Avenier; A. Montagné; M. Juhel; R. Duru; L.-R. Clément; C. Borowiak; Michel Buczko; Christophe Gaquière (BCICTS, 2018)

mm-Wave Through-Load Switch for in-situ Vector Network Analyzer on a 55-nm BiCMOS Technology. - Marc Margalef-Rovira; Abdelhalim A. Saadi; Sylvain Bourdel; Manuel J. Barragán; Emmanuel Pistono; Christophe Gaquière; Philippe Ferrari (NEWCAS, 2020)

Substrate engineering of inductors on SOI for improvement of Q-factor and application in LNA. - Arun Bhaskar; Justine Philippe; Vanessa Avramovic; Flavie Braud; Jean-François Robillard; Cédric Durand; Daniel Gloria; Christophe Gaquière; Emmanuel Dubois 002 (CoRR, 2020)

Large-area femtosecond laser milling of silicon employing trench analysis. - Arun Bhaskar; Justine Philippe; Flavie Braud; Etienne Okada; Vanessa Avramovic; Jean-François Robillard; Cédric Durand; Daniel Gloria; Christophe Gaquière; Emmanuel Dubois 002 (CoRR, 2020)

Extraction of nonlinear Taylor series coefficients for GaN HEMT over multi-bias condition. - Mohammad Abdul Alim; A. Tahsin; Ali A. Rezazadeh; Christophe Gaquière (Microelectron. J., 2020)

Temperature Dependence of the Taylor Series Coefficients and Intermodulation Distortion Characteristics of GaN HEMT. - Mohammad Abdul Alim; Mayahsa M. Ali; Ali A. Rezazadeh; Christophe Gaquière (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2020)

mm-Wave Single-Pole Double-Throw switches: HBT- vs MOSFET-based designs. - Marc Margalef-Rovira; Christophe Gaquière; Antonio Augusto Lisboa de Souza; Loic Vincent; Manuel J. Barragán; Emmanuel Pistono; Florence Podevin; Philippe Ferrari (NEWCAS, 2021)

Design of zero bias power detectors towards power consumption optimization in 5G devices. - Issa Alaji; Walid Aouimeur; Haitham Ghanem; Etienne Okada; Sylvie Lépilliet; Daniel Gloria; Guillaume Ducournau; Christophe Gaquière (Microelectron. J., 2021)

mm-Wave Through-Load Element for On-Wafer Measurement Applications. - Marc Margalef-Rovira; Olivier Occello; Abdelhalim A. Saadi; Vanessa Avramovic; Sylvie Lépilliet; Loic Vincent; Manuel J. Barragán; Emmanuel Pistono; Sylvain Bourdel; Christophe Gaquière; Philippe Ferrari (IEEE Trans. Circuits Syst. I Regul. Pap., 2021)

Special Session on RF/5G Test. - William R. Eisenstadt; Mark Roos; Devin Morris; José Luis González-Jiménez; Christopery Mounet; Manuel J. Barragán; Gildas Léger; Florent Cilici; Estelle Lauga-Larroze; Salvador Mir; Sylvain Bourdel; Marc Margalef-Rovira; et al. (ETS, 2022)

Temperature compensated power detector towards power consumption optimization in 5G devices. - Issa Alaji; Etienne Okada; Daniel Gloria; Guillaume Ducournau; Christophe Gaquière (Microelectron. J., 2022)

Drone Detection and Tracking Using RF Identification Signals. - Driss Aouladhadj; Ettien Lazare Kpre; Virginie Deniau; Aymane Kharchouf; Christophe Gransart; Christophe Gaquière (Sensors, 2023)

Trusted SMEs for Sustainable Growth of Europeans Economical Backbone to Strengthen the Digital Sovereignty: The KDT Resilient Trust Project. - Hassan Aboushady; Noemie Beringuier-Boher; Kelly Burke; Philippe Dallemagne; Mario De Biase; Manuel Di Frangia; Virginie Deniau; Enrico Ferrari; Christophe Gaquière; Dominique Morche; Fabio Patrone; Stefano Pesci; et al. (DSD, 2024)

A Heterogeneous Embedded Platform for AI-Based Protocol Identification. - Aymane Kharchouf; Smail Niar; Virginie Deniau; Rihab Hmida; Christophe Gaquière (ARC, 2025)