SiC lateral Schottky diode technology for integrated smart power converter. - Jean-François Mogniotte; Christophe Raynaud; Mihai Lazar; Bruno Allard; Dominique Planson (ICIT, 2018)

Robustness study of 1700 V 45 mΩ SiC MOSFETs. - Quentin Molin; Mehdi Kanoun; Christophe Raynaud; Hervé Morel (ICIT, 2018)

Measurement and analysis of SiC-MOSFET threshold voltage shift. - Quentin Molin; Mehdi Kanoun; Christophe Raynaud; Hervé Morel (Microelectron. Reliab., 2018)

Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes. - P. Vigneshwara Raja; Christophe Raynaud; Camille Sonneville; Atse Julien Eric N'Dohi; Hervé Morel; Luong-Viêt Phung; Thi Huong Ngo; Philippe De Mierry; Éric Frayssinet; Hassan Maher; Josiane Tasselli; Karine Isoird; et al. (Microelectron. J., 2022)

Physics-Based Strategies for Fast TDDB Testing and Lifetime Estimation in SiC Power MOSFETs. - Oriol Avino-Salvado; Cyril Buttay; Ferran Bonet; Christophe Raynaud; Pascal Bevilacqua; José Rebollo; Hervé Morel; Xavier Perpiñà (IEEE Trans. Ind. Electron., 2024)