Study of the Walk-Out Effect of Junction Breakdown Instability of the High-Voltage Depletion-Mode N-Channel MOSFET for NAND Flash Peripheral Device and an Efficient Layout Solution. - Chieh Roger Lo; Teng-Hao Yeh; Wei-Chen Chen; Hang-Ting Lue; Keh-Chung Wang; Chih-Yuan Lu; Yao-Wen Chang; Yung-Hsiang Chen; Chu-Yung Liu (IRPS, 2020)