Effect of binding force between silver paste and silicon on power degradation of crystalline silicon solar module. - Hong Yang; He Wang; Chuanke Chen; Dingyue Cao; Huacong Yu (Microelectron. Reliab., 2014)

Vertical Channel-All-Around (CAA) IGZO FET under 50 nm CD with High Read Current of 32.8 μA/μm (Vth + 1 V), Well-performed Thermal Stability up to 120 ℃ for Low Latency, High-density 2T0C 3D DRAM Application. - Kailiang Huang; Xinlv Duan; Junxiao Feng; Ying Sun; Congyan Lu; Chuanke Chen; Guangfan Jiao; Xinpeng Lin; Jinhai Shao; Shihui Yin; Jiazhen Sheng; Zhaogui Wang; et al. (VLSI Technology and Circuits, 2022)

A monolithic 3D IGZO-RRAM-SRAM-integrated architecture for robust and efficient compute-in-memory enabling equivalent-ideal device metrics. - Shengzhe Yan; Zhaori Cong; Zi Wang; Zhuoyu Dai; Zeyu Guo 002; Zhihang Qian; Xufan Li; Xu Zheng; Chuanke Chen; Nianduan Lu; Chunmeng Dou; Guanhua Yang; et al. (Sci. China Inf. Sci., 2025)