22.3 A 128Gb 8-High 512GB/s HBM2E DRAM with a Pseudo Quarter Bank Structure, Power Dispersion and an Instruction-Based At-Speed PMBIST. - Dong-Uk Lee; Ho Sung Cho; Jihwan Kim; Young Jun Ku; Sangmuk Oh; Chul Dae Kim; Hyun Woo Kim; Wooyoung Lee; Tae-Kyun Kim 001; Tae Sik Yun; Min Jeong Kim; SeungGyeon Lim; et al. (ISSCC, 2020)