Aggressively Scaled Atomic Layer Deposited Amorphous InZnOx Thin Film Transistor Exhibiting Prominent Short Channel Characteristics (SS= 69 mV/dec.; DIBL = 27.8 mV/V) and High Gm(802 μS/μm at VDS = 2V). - Yan-Kui Liang; June-Yang Zheng; Yu-Lon Lin; Wei-Li Li; Yu-Cheng Lu; Dong-Ru Hsieh; Li-Chi Peng; Tsung-Te Chou; Chi-Chung Kei; Chun-Chieh Lu; Huai-Ying Huang; Yuan-Chieh Tseng; et al. (VLSI Technology and Circuits, 2023)