15.9 A 16nm 16Mb Embedded STT-MRAM with a 20ns Write Time, a 1012 Write Endurance and Integrated Margin-Expansion Schemes. - Ku-Feng Lin; Hiroki Noguchi; Yi-Chun Shih; Perng-Fei Yuh; Yuan-Jen Lee; Tung-Cheng Chang; Sheng-Po Huang; Yu-Fan Lin; Chun-Ying Lee; Yen-Hsiang Huang; Jui-Che Tsai; Saman Adham; et al. (ISSCC, 2024)