An Up to 10MHz 6.8% Minimum Duty Ratio GaN Driver with Dual-MOS-Switches Bootstrap and Adaptive Short-Pulse Based High-CMTI Level Shifter Achieving 6.05% Efficiency Improvement. - Xin Ming; Zhiyi Lin; Tian-yi Sun; Yao Qin; Yuan-Yuan Liu; Chun-wang Zhuang; Zhao-ji Li; Bo Zhang 027 (CICC, 2022)

A Monolithic GaN Driver and GaN Power Switch with Power-rail Charging Saturation Bootstrap technique achieving gate rising and falling time ratio of 1.28. - Yao Qin; Xin Ming; Zhiyi Lin; Zhi-Jiu Wu; Chun-wang Zhuang; Jian-Jun Kuang; Peng Luo; Bo Zhang 031 (CICC, 2023)

A level shifter for high-side GaN drivers with enhanced dV/dt immunity and speed. - Yao Qin; Xin Ming; Zikai Ye; Zhiyi Lin; Chunwang Zhuang; Zhaoji Li; Bo Zhang 027 (Microelectron. J., 2023)

A 50-V 50-MHz High-Noise-Immunity Capacitive-Coupled Level Shifter With Digital Noise Blanker for GaN Drivers. - Yao Qin; Xin Ming; Zhiyi Lin; Zikai Ye; Jiawei Shi; Chunwang Zhuang; Zhaoji Li; Bo Zhang 027 (IEEE Trans. Circuits Syst. I Regul. Pap., 2023)