Inserting a low-temperature n-GaN underlying layer to separate nonradiative recombination centers improves the luminescence efficiency of blue InGaN/GaN LEDs. - Ray-Ming Lin; Yung-Hsiang Lin; Chung-Hao Chiang; Mu-Jen Lai; Yi-Lun Chou; Yuan-Chieh Lu; Shou-Yi Kuo; Bor-Ren Fang; Meng-Chyi Wu (Microelectron. Reliab., 2010)