High-voltage quasi-vertical GaN-on-Si Schottky barrier diode with edge termination structure of optimized multi-level N ion implantation. - Qingyuan Chang; Bin Hou; Ling Yang 003; Mei Wu; Meng Zhang; Hao Lu 012; Fuchun Jia; Xuerui Niu; Chunzhou Shi; Jiale Du; Mao Jia; Qian Yu; et al. (Sci. China Inf. Sci., 2024)

Improved RF power performance via electrostatic shielding effect using AlGaN/GaN/graded-AlGaN/GaN double-channel structure. - Chunzhou Shi; Ling Yang 003; Meng Zhang; Hao Lu 012; Mei Wu; Bin Hou; Xuerui Niu; Qian Yu; Wenliang Liu 003; Wenze Gao; Xiaohua Ma 001; Yue Hao 001 (Sci. China Inf. Sci., 2024)