Fully integrated Si: HfO2 Negative Capacitance 2D-2D WSe2/SnSe2 Subthermionic Tunnel FETs. - Sadegh Kamaei; Ali Saeidi; Xia Liu; Carlotta Gastaldi; Clara Moldovan; Jürgen Brugger; Adrian M. Ionescu (ESSCIRC, 2022)