Thermal storage effects on AlGaN/GaN HEMT. - Francesca Danesin; Augusto Tazzoli; Franco Zanon; Gaudenzio Meneghesso; Enrico Zanoni; Antonio Cetronio; Claudio Lanzieri; Simone Lavanga; Marco Peroni; Paolo Romanini (Microelectron. Reliab., 2008)

Electro-thermal characterization of AlGaN/GaN HEMT on Silicon Microstrip Technology. - Michele Riccio; A. Pantellini; Andrea Irace; Giovanni Breglio; A. Nanni; Claudio Lanzieri (Microelectron. Reliab., 2011)

Field plate related reliability improvements in GaN-on-Si HEMTs. - Alessandro Chini; Fabio Soci; Fausto Fantini; Antonio Nanni; Alessio Pantellini; Claudio Lanzieri; Davide Bisi; Gaudenzio Meneghesso; Enrico Zanoni (Microelectron. Reliab., 2012)

Influence of fluorine-based dry etching on electrical parameters of AlGaN/GaN-on-Si High Electron Mobility Transistors. - Davide Bisi; Matteo Meneghini; Antonio Stocco; Giulia Cibin; Alessio Pantellini; Antonio Nanni; Claudio Lanzieri; Enrico Zanoni; Gaudenzio Meneghesso (ESSDERC, 2013)

Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs. - Alessandro Chini; Fabio Soci; Fausto Fantini; A. Nanni; A. Pantellini; Claudio Lanzieri; Gaudenzio Meneghesso; Enrico Zanoni (Microelectron. Reliab., 2013)

Reliability Investigation of GaN HEMTs for MMICs Applications. - Alessandro Chini; Gaudenzio Meneghesso; Alessio Pantellini; Claudio Lanzieri; Enrico Zanoni (Micromachines, 2014)

Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs. - Davide Bisi; Antonio Stocco; Isabella Rossetto; Matteo Meneghini; Fabiana Rampazzo; Alessandro Chini; Fabio Soci; Alessio Pantellini; Claudio Lanzieri; Piero Gamarra; Cedric Lacam; M. Tordjman; et al. (Microelectron. Reliab., 2015)