Analysis of 6 T SRAM cell in sub-45 nm CMOS and FinFET technologies. - Roberto B. Almeida; Cleiton Magano Marques; Paulo F. Butzen; Fábio G. R. G. da Silva; Ricardo A. L. Reis; Cristina Meinhardt (Microelectron. Reliab., 2018)

Soft Error Reliability of SRAM cells during the three operation states. - Cleiton Magano Marques; Cristina Meinhardt; Paulo F. Butzen (LATS, 2020)

Soft Error Sensibility Window at FinFET DICE SRAM. - Maria Eduarda de Melo Hang; Cleiton Magano Marques; Paulo F. Butzen; Cristina Meinhardt (LASCAS, 2021)

Soft Errors Sensitivity of SRAM Cells in Hold, Write, Read and Half-Selected Conditions. - Cleiton Magano Marques; Cristina Meinhardt; Paulo Francisco Butzen (J. Electron. Test., 2021)

A Detailed Electrical Analysis of SEE on 28 nm FDSOI SRAM Architectures. - Cleiton Magano Marques; Leonardo Heitich Brendler; Frédéric Wrobel; Alexandra L. Zimpeck; Walter E. Calienes Bartra; Paulo F. Butzen; Cristina Meinhardt (SBCCI, 2023)