Reliability investigation of the degradation of the surface passivation of InAlN/GaN HEMTs using a dual gate structure. - Clemens Ostermaier; Peter Lagger; Mohammed Alomari; Patrick Herfurth; David Maier 002; Alexander Alexewicz; Marie-Antoinette di Forte-Poisson; Sylvain L. Delage; Gottfried Strasser; Dionyz Pogany; Erhard Kohn (Microelectron. Reliab., 2012)

On the fly characterization of charge trapping phenomena at GaN/dielectric and GaN/AlGaN/dielectric interfaces using impedance measurements. - Roberta Stradiotto; Gregor Pobegen; Clemens Ostermaier; Tibor Grasser (ESSDERC, 2015)

Thermal activation of PBTI-related stress and recovery processes in GaN MIS-HEMTs using on-wafer heaters. - Peter Lagger; S. Donsa; P. Spreitzer; Gregor Pobegen; M. Reiner; H. Naharashi; J. Mohamed; H. Mosslacher; G. Prechtl; Dionyz Pogany; Clemens Ostermaier (IRPS, 2015)

Review of bias-temperature instabilities at the III-N/dielectric interface. - Clemens Ostermaier; Peter Lagger; M. Reiner; Dionyz Pogany (Microelectron. Reliab., 2018)

A common hard-failure mechanism in GaN HEMTs in accelerated switching and single-pulse short-circuit tests. - D. Wieland; S. Ofner; Manuel Stabentheiner; Boris Butej; Christian Koller; J. Sun; Andrea Minetto; Korbinian Reiser; Oliver Häberlen; Michael Nelhiebel; Michael Glavanovics; Dionyz Pogany; et al. (IRPS, 2023)

Evidence for 2D Hole Gas in GaN Gate Injection Transistors and its Role in RDson Recovery. - Bernhard Ruch; Rajarshi Roy Chaudhuri; Boris Butej; Joao Gomes; Manuel Stabentheiner; Korbinian Reiser; Christian Koller; Dionyz Pogany; Clemens Ostermaier; Michael Waltl (IRPS, 2025)