Epitaxial growth of LaAlO3 on Si(0 0 1) using interface engineering. - Clement Merckling; G. Delhaye; Mario El Kazzi; S. Gaillard; Yoann Rozier; L. Rapenne; B. Chenevier; O. Marty; G. Saint-Girons; M. Gendry; Y. Robach; Guy Hollinger (Microelectron. Reliab., 2007)

Physics-informed machine learning to analyze oxide defect-induced RTN in gate leakage current. - Anirudh Varanasi; Robin Degraeve; Philippe J. Roussel; Andrea Vici; Clement Merckling (IRPS, 2024)

Algorithm for Robust Correction of Long-Term Drift Components in Gate Leakage Current RTN Data. - Anirudh Varanasi; Robin Degraeve; Philippe J. Roussel; Clement Merckling (IRPS, 2025)

RTNinja: a generalized machine learning framework for analyzing random telegraph noise signals in nanoelectronic devices. - Anirudh Varanasi; Robin Degraeve; Philippe Roussel; Clement Merckling (CoRR, 2025)