Reliability of polycrystalline silicon thin film resistors. - M. Nakabayashi; Hidenori Ohyama; Eddy Simoen; M. Ikegami; Cor Claeys; K. Kobayashi; M. Yoneoka; K. Miyahara (Microelectron. Reliab., 2001)

Radiation damages of polycrystalline silicon films and npn Si transistors by high-energy particle irradiation. - Hidenori Ohyama; M. Nakabayashi; Eddy Simoen; Cor Claeys; T. Tanaka; T. Hirao; S. Onada; K. Kobayashi (Microelectron. Reliab., 2001)

Degradation and recovery of AlGaAs/GaAs p-HEMT irradiated by high-energy particle. - Hidenori Ohyama; Eddy Simoen; S. Kuroda; Cor Claeys; Y. Takami; T. Hakata; K. Kobayashi; M. Nakabayashi; Hiromi Sunaga (Microelectron. Reliab., 2001)

Technological Challenges of Advanced CMOS Processing and Their Impact on Design Aspects. - Cor Claeys (VLSI Design, 2004)

Degradation of electrical performance and floating body effect in ultra thin gate oxide FD-SOI n-MOSFETs by 7.5-MeV proton irradiation. - Kiyoteru Hayama; Kenichiro Takakura; Hidenori Ohyama; Abdelkarim Mercha; Eddy Simoen; Cor Claeys; Joan Marc Rafí; Michael Kokkoris (Microelectron. Reliab., 2004)

Radiation source dependence of performance degradation in thin gate oxide fully-depleted SOI n-MOSFETs. - Kiyoteru Hayama; Kenichiro Takakura; Hidenori Ohyama; S. Kuboyama; S. Matsuda; Joan Marc Rafí; Abdelkarim Mercha; Eddy Simoen; Cor Claeys (Microelectron. Reliab., 2005)

Impact of the twin-gate structure on the linear kink effect in PD SOI nMOSFETS. - Paula Ghedini Der Agopian; João Antonio Martino; Eddy Simoen; Cor Claeys (Microelectron. J., 2006)

The temperature mobility degradation influence on the zero temperature coefficient of partially and fully depleted SOI MOSFETs. - L. M. Camillo; João Antonio Martino; Eddy Simoen; Cor Claeys (Microelectron. J., 2006)

Impact on the back gate degradation in partially depleted SOI n-MOSFETs by 2-MeV electron irradiation. - Kiyoteru Hayama; Kenichiro Takakura; K. Shigaki; Hidenori Ohyama; Joan Marc Rafí; Abdelkarim Mercha; Eddy Simoen; Cor Claeys (Microelectron. Reliab., 2006)

Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs. - Joan Marc Rafí; Eddy Simoen; Kiyoteru Hayama; Abdelkarim Mercha; Francesca Campabadal; Hidenori Ohyama; Cor Claeys (Microelectron. Reliab., 2006)

Study of the linear kink effect in PD SOI nMOSFETs. - Paula Ghedini Der Agopian; João Antonio Martino; Eddy Simoen; Cor Claeys (Microelectron. J., 2007)

High-temperature performance of state-of-the-art triple-gate transistors. - Kerem Akarvardar; Abdelkarim Mercha; Eddy Simoen; Vaidyanathan Subramanian; Cor Claeys; Pierre Gentil; Sorin Cristoloveanu (Microelectron. Reliab., 2007)

Interfacial layer quality effects on low-frequency noise (1/f) in p-MOSFETs with advanced gate stacks. - Paolo Srinivasan; Felice Crupi; Eddy Simoen; Paolo Magnone; Calogero Pace; Durga Misra; Cor Claeys (Microelectron. Reliab., 2007)

Low-frequency noise assessment of the transport mechanisms in SiGe channel bulk FinFETs. - Tommaso Romeo; Luigi Pantisano; Eddy Simoen; Raymond Krom; Mitsuhiro Togo; N. Horiguchi; Jérôme Mitard; Aaron Thean; Guido Groeseneken; Cor Claeys; Felice Crupi (ESSDERC, 2012)

On the correlation between the retention time of FBRAM and the low-frequency noise of UTBOX SOI nMOSFETs. - Eddy Simoen; Marc Aoulaiche; Anabela Veloso; M. Jurczak; Cor Claeys; L. Mendes Almeida; Maria Glória Caño de Andrade; A. Luque Rodriguez; J. A. Jimenez Tejada; Christian Caillat; Pierre Fazan (ESSDERC, 2012)

An analytic method to compute the stress dependence on the dimensions and its influence in the characteristics of triple gate devices. - Renan Trevisoli Doria; João Antonio Martino; Eddy Simoen; Cor Claeys; Marcelo Antonio Pavanello (Microelectron. Reliab., 2012)

High-energy neutrons effect on strained and non-strained SOI MuGFETs and planar MOSFETs. - Valeria Kilchytska; Joaquín Alvarado; S. Put; Nadine Collaert; Eddy Simoen; Cor Claeys; Otilia Militaru; Guy Berger; Denis Flandre (Microelectron. Reliab., 2012)

Drain currents and their excess noise in triple gate bulk p-channel FinFETs of different geometry. - N. Lukyanchikova; N. Garbar; Valeriya Kudina; A. Smolanka; Eddy Simoen; Cor Claeys (Microelectron. Reliab., 2013)

Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation. - Maria Glória Caño de Andrade; João Antonio Martino; Marc Aoulaiche; Nadine Collaert; Eddy Simoen; Cor Claeys (Microelectron. Reliab., 2014)

Editor's note. - Ru Huang 001; Hiroshi Iwai; Cor Claeys; Simon Deleonibus; Runsheng Wang (Sci. China Inf. Sci., 2016)

Impact of Device Architecture and Gate Stack Processing on the Low-Frequency Noise of Silicon Nanowire Transistors. - Eddy Simoen; Alberto Vinicius Oliveira; Anabela Veloso; Adrian Vaisman Chasin; Romain Ritzenthaler; Hans Mertens; Naoto Horiguchi; Cor Claeys (ASICON, 2019)