Doping and temperature dependence of minority carrier diffusion lengths in InGaAs/InP photodiodes. - Alexandre W. Walker; Oliver J. Pitts; Craig Storey; Philip Waldron; Costel Flueraru (IEEE SENSORS, 2019)

Measurement and Modeling of GaN HEMTs Operating at 500 °C. - Hao Xue; Craig Storey; Jean-Paul Noel; Ryan Griffin (CCECE, 2024)