A 28-GHz-band Stacked FET Linear Power Amplifier IC with 36.2 % PAE at 3-dB back-off from P1dB in 56-nm SOI CMOS. - Cuilin Chen; Tsuyoshi Sugiura; Toshihiko Yoshimasu (RWS, 2019)

A 28-GHz-Band Highly Linear Stacked-FET Power Amplifier IC with High Back-Off PAE in 56-nm SOI CMOS. - Cuilin Chen; Tsuyoshi Sugiura; Toshihiko Yoshimasu (IEICE Trans. Electron., 2020)