NBTI Impact of Surface Orientation in Stacked Gate-All-Around Nanosheet Transistor. - Huimei Zhou; Miaomiao Wang 006; Jingyun Zhang; Koji Watanabe; Curtis Durfee; Shogo Mochizuki; Ruqiang Bao; Richard G. Southwick; Maruf Bhuiyan; Basker Veeraraghavan (IRPS, 2020)

SiGe Gate-All-around Nanosheet Reliability. - Huimei Zhou; Miaomiao Wang 006; Ruqiang Bao; Curtis Durfee; Liqiao Qin; Jingyun Zhang (IRPS, 2022)