A Novel Memory Array Based on an Annular Single-Poly EPROM Cell for Use in Standard CMOS Technology. - Cyrille Dray; Philippe Gendrier (MTDT, 2002)

Offset Analysis and Design Optimization of a Dynamic Sense Amplifier for Resistive Memories. - Salmen Mraihi; El Mehdi Boujamaa; Cyrille Dray; Jacques-Olivier Klein (ISVLSI, 2017)

High Density STT-MRAM compiler design, validation and characterization methodology in 28nm FDSOI technology. - Piyush Jain; Akshay Kumar; Nicolaas Van Winkelhoff; Didier Gayraud; Surya Gupta; Abdelali El Amraoui; Giorgio Palma; Alexandra Gourio; Laurent Vachez; Luc Palau; Jean-Christophe Buy; Cyrille Dray (DATE, 2020)

MBIST Support for Reliable eMRAM Sensing. - Jongsin Yun; Benoit Nadeau-Dostie; Martin Keim; Cyrille Dray; El Mehdi Boujamaa (ETS, 2020)

MBIST Supported Multi Step Trim for Reliable eMRAM Sensing. - Jongsin Yun; Benoit Nadeau-Dostie; Martin Keim; Lori Schramm; Cyrille Dray; El Mehdi Boujamaa; Khushal Gelda (ITC, 2020)

A 14.7Mb/mm2 28nm FDSOI STT-MRAM with Current Starved Read Path, 52Ω/Sigma Offset Voltage Sense Amplifier and Fully Trimmable CTAT Reference. - El Mehdi Boujamaa; Samsudeen Mohamed Ali; Steve Ngueya Wandji; Alexandra Gourio; Suk-Soo Pyo; Gwanhyeob Koh; Yoonjong Song; Taejoong Song; Jongwook Kye; Jean-Christophe Vial; Andrew Sowden; Manuj Rathor; et al. (VLSI Circuits, 2020)

A Compact Model for Scalable MTJ Simulation. - Fernando García-Redondo; Pranay Prabhat; Mudit Bhargava; Cyrille Dray (CoRR, 2021)

Transitioning eMRAM from Pilot Project to Volume Production. - Cyrille Dray; Khushal Gelda; Benoit Nadeau-Dostie; Wei Zou; Luc Romain; Jongsin Yun; Harshitha Kodali; Lori Schramm; Martin Keim (ITC, 2023)