3D monolithic integration. - Perrine Batude; Maud Vinet; Arnaud Pouydebasque; Cyrille Le Royer; Bernard Previtali; Claude Tabone; Jean-Michel Hartmann; Loic Sanchez; Laurence Baud; Veronique Carron; Alain Toffoli; Fabienne Allain; et al. (ISCAS, 2011)

Z2-FET used as 1-transistor high-speed DRAM. - Jing Wan; Cyrille Le Royer; Alexander Zaslavsky; Sorin Cristoloveanu (ESSDERC, 2012)

Variability of planar Ultra-Thin Body and Buried oxide (UTBB) FDSOI MOSFETs. - J. Mazurier; Olivier Weber; François Andrieu; Cyrille Le Royer; Olivier Faynot; Maud Vinet (ICICDT, 2014)

Parasitic Capacitance Analysis in Short Channel GaN MIS-HEMTs. - Roméo Kom Kammeugne; Charles Leroux; Tadeu Mota Frutuoso; Jacques Cluzel; Laura Vauche; Cyrille Le Royer; Romain Gwoziecki; Xavier Garros; Fred Gaillard; Matthew Charles; Edwige Bano; Gérard Ghibaudo (ESSDERC, 2021)

Reliable method for low field temperature dependent mobility extraction at Al2O3/GaN interface. - B. Rrustemi; Aby-Gaël Viey; Marie-Anne Jaud; François Triozon; William Vandendaele; Charles Leroux; Jacques Cluzel; S. Martin; Cyrille Le Royer; Romain Gwoziecki; Roberto Modica; Ferdinando Iucolano; et al. (ESSDERC, 2021)