Backside Defect Localizations and Revelations Techniques on Gallium Arsenide (GaAs) Devices. - Felix Beaudoin; D. Carisetti; Romain Desplats; Philippe Perdu; Dean Lewis; J. C. Clement (Microelectron. Reliab., 2002)

Study of passivation defects by electroluminescence in AlGaN/GaN HEMTS on SiC. - Mohsine Bouya; D. Carisetti; Nathalie Malbert; Nathalie Labat; Philippe Perdu; J. C. Clement; M. Bonnet; G. Pataut (Microelectron. Reliab., 2007)

Analysis of traps effect on AlGaN/GaN HEMT by luminescence techniques. - Mohsine Bouya; Nathalie Malbert; Nathalie Labat; D. Carisetti; Philippe Perdu; J. C. Clement; Benoit Lambert; M. Bonnet (Microelectron. Reliab., 2008)

Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations. - Mustapha Faqir; Mohsine Bouya; Nathalie Malbert; Nathalie Labat; D. Carisetti; Benoit Lambert; Giovanni Verzellesi; Fausto Fantini (Microelectron. Reliab., 2010)

Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress. - Laurent Brunel; Benoit Lambert; P. Mezenge; J. Bataille; D. Floriot; Jan Grünenpütt; Hervé Blanck; D. Carisetti; Y. Gourdel; Nathalie Malbert; Arnaud Curutchet; Nathalie Labat (Microelectron. Reliab., 2013)

Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements. - S. Karboyan; Jean-Guy Tartarin; M. Rzin; Laurent Brunel; Arnaud Curutchet; Nathalie Malbert; Nathalie Labat; D. Carisetti; Benoit Lambert; M. Mermoux; E. Romain-Latu; F. Thomas; et al. (Microelectron. Reliab., 2013)

Failure analysis of GaAs microwave devices with plastic encapsulation by electro-optical techniques. - W. Ben Naceur; Nathalie Malbert; Nathalie Labat; Hélène Frémont; D. Carisetti; J. C. Clement; J. L. Muraro; Barbara Bonnet (Microelectron. Reliab., 2013)