Influence of the annealing temperature on the IR properties of SiO2 films grown from SiH4+O2. - V. Em. Vamvakas; D. Davazoglou (Microelectron. Reliab., 2005)

Characterization of various insulators for possible use as low-k dielectrics deposited at temperatures below 200degreeC. - Maria Vasilopoulou; A. M. Douvas; D. Kouvatsos; Panagiotis Argitis; D. Davazoglou (Microelectron. Reliab., 2005)