Impact of a 10nm Ultra-Thin BOX (UTBOX) and Ground Plane on FDSOI devices for 32nm node and below. - Claire Fenouillet-Béranger; P. Perreau; S. Denorme; L. Tosti; François Andrieu; Olivier Weber; S. Barnola; C. Arvet; Y. Campidelli; Sébastien Haendler; R. Beneyton; C. Perrot; et al. (ESSCIRC, 2009)

32nm and beyond Multi-VT Ultra-Thin Body and BOX FDSOI: From device to circuit. - Olivier Thomas; Jean-Philippe Noel; Claire Fenouillet-Béranger; Marie-Anne Jaud; J. Dura; P. Perreau; Frédéric Boeuf; François Andrieu; D. Delprat; F. Boedt; Konstantin Bourdelle; Bich-Yen Nguyen; et al. (ISCAS, 2010)

Engineered SiC materials for power technologies. - Walter Schwarzenbach; S. Rouchier; G. Berre; R. Boulet; O. Ledoux; Enrica Cela; Alexis Drouin; A. Chapelle; S. Monnoye; H. Biard; K. Alassaad; L. Viravaux; et al. (ICICDT, 2022)