Hot-carrier reliability of 20V MOS transistors in 0.13 mum CMOS technology. - Yannick Rey-Tauriac; J. Badoc; B. Reynard; Raúl Andrés Bianchi; D. Lachenal; Alain Bravaix (Microelectron. Reliab., 2005)

Degradation mechanism understanding of NLDEMOS SOI in RF applications. - D. Lachenal; Alain Bravaix; Frederic Monsieur; Yannick Rey-Tauriac (Microelectron. Reliab., 2007)