Evaluation of the ESD performance of local protections based on SCR or bi-SCR with dynamic or static trigger circuit in 32 nm. - J. Bourgeat; Christophe Entringer; Philippe Galy; Marise Bafleur; D. Marin-Cudraz (Microelectron. Reliab., 2010)

A full characterization of single pitch IO ESD protection based on silicon controlled rectifier and dynamic trigger circuit in CMOS 32 nm node. - J. Bourgeat; Philippe Galy; A. Dray; Jean Jimenez; D. Marin-Cudraz; Blaise Jacquier (Microelectron. Reliab., 2011)

Reliability impact due to high current, lattice and hot carriers temperatures on β(2×2) matrix ESD power devices for advanced CMOS technologies. - Philippe Galy; J. Bourgeat; Jean Jimenez; Blaise Jacquier; D. Marin-Cudraz; Sylvain Dudit (Microelectron. Reliab., 2011)

BIMOS transistor and its applications in ESD protection in advanced CMOS technology. - Philippe Galy; Jean Jimenez; Johan Bourgeat; A. Dray; Ghislain Troussier; Boris Heitz; Nicolas Guitard; David Marin-Cudraz; H. Beckrich-Ros (ICICDT, 2012)

Symmetrical ESD trigger and pull-up using BIMOS transistor in advanced CMOS technology. - Philippe Galy; Johan Bourgeat; Jean Jimenez; Nicolas Guitard; Alexandre Dray; Ghislain Troussier; Blaise Jacquier; David Marin-Cudraz (Microelectron. Reliab., 2012)

ESD protection using BIMOS transistor in 100 GHz RF application for advanced CMOS technology. - Philippe Galy; T. Lim; Jean Jimenez; Boris Heitz; Ph. Benech; J. M. Fournier; D. Marin-Cudraz (ICICDT, 2013)

Symmetrical ESD protection for advanced CMOS technology dedicated to 100 GHz RF application. - Philippe Galy; T. Lim; J. Bourgeat; Jean Jimenez; Boris Heitz; D. Marin-Cudraz; Ph. Benech; J. M. Fournier (Microelectron. Reliab., 2013)

New modular bi-directional power-switch and self ESD protected in 28nm UTBB FDSOI advanced CMOS technology. - Philippe Galy; J. Bourgeat; D. Marin-Cudraz (ICICDT, 2014)