Nanoscale channel engineered double gate MOSFET for mixed signal applications using high-k dielectric. - D. Nirmal; P. Vijayakumar 003; K. Shruti; N. Mohankumar 002 (Int. J. Circuit Theory Appl., 2013)

Subthreshold performance of gate engineered FinFET devices and circuit with high-k dielectrics. - D. Nirmal; P. Vijayakumar 003; Divya Mary Thomas; Binola K. Jebalin; N. Mohankumar 002 (Microelectron. Reliab., 2013)

The influence of high-k passivation layer on breakdown voltage of Schottky AlGaN/GaN HEMTs. - Binola K. Jebalin; A. Shobha Rekh; P. Prajoon; N. Mohankumar 002; D. Nirmal (Microelectron. J., 2015)

GaAs metamorphic high electron mobility transistors for future deep space-biomedical-millitary and communication system applications: A review. - J. Ajayan; D. Nirmal; P. Mohankumar; Dheena Kuriyan; A. S. Augustine Fletcher; L. Arivazhagan; B. Santhosh Kumar (Microelectron. J., 2019)

Nanosheet field effect transistors-A next generation device to keep Moore's law alive: An intensive study. - J. Ajayan; D. Nirmal; Shubham Tayal; Sandip Bhattacharya; L. Arivazhagan; A. S. Augustine Fletcher; P. Murugapandiyan; D. Ajitha (Microelectron. J., 2021)

Current collapse degradation in GaN High Electron Mobility Transistor by virtual gate. - D. Godfrey; D. Nirmal; L. Arivazhagan; D. Godwinraj; N. Mohan Kumar; Yulin Chen; Wenkuan Yeh (Microelectron. J., 2021)

Advances in neuromorphic devices for the hardware implementation of neuromorphic computing systems for future artificial intelligence applications: A critical review. - J. Ajayan; D. Nirmal; Binola K. Jebalin; S. Sreejith (Microelectron. J., 2022)

Analysis of nanoscale digital circuits using novel drain-gate underlap DMG hetero-dielectric TFET. - D. Gracia; D. Nirmal; D. Jackuline Moni (Microelectron. J., 2022)

Investigation of variable field plate length in GaN HEMT on SiC substrate for MMIC applications. - Binola K. Jebalin; G. Gifta; S. Angen; P. Prajoon; D. Nirmal (Microelectron. J., 2023)

A new analytical modelling of 10 nm negative capacitance-double gate TFET with improved cross talk and miller effects in digital circuit applications. - Adrija Mukherjee; Papiya Debnath; D. Nirmal; Manash Chanda (Microelectron. J., 2023)

A comprehensive review of AlGaN/GaN High electron mobility transistors: Architectures and field plate techniques for high power/ high frequency applications. - J. S. Raj Kumar; H. Victor Du John; Binola K. Jebalin; J. Ajayan; Angelin Delighta A; D. Nirmal (Microelectron. J., 2023)

Investigation on effect of AlN barrier thickness and lateral scalability of Fe-doped recessed T-gate AlN/GaN/SiC HEMT with polarization-graded back barrier for future RF electronic applications. - B. Mounika; J. Ajayan; Sandip Bhattacharya; D. Nirmal; V. Bharath Sreenivasulu; N. Aruna Kumari (Microelectron. J., 2023)

Enhancing Reliability and RF Performance: The Impact of Fe Doped Back Barrier Optimization in GaN HEMTs. - S. Angen Franklin; Binola K. Jebalin; Subhash Chander; D. Nirmal (ICDCS, 2024)

Parameter Extraction for Large Periphery Indigenous AlGaN/GaN HEMT Device. - Deepti Mongia; Subhash Chander; D. Nirmal (ICDCS, 2024)

A Novel LG = 40 nm AlN-GDC-HEMT on SiC Wafer With fT/IDS,peak of 400 GHz/3.18 mA/mm for Future RF Power Amplifiers. - B. Mounika; Asisa Kumar Panigrahy; J. Ajayan; N. Khadar Basha; Vakkalakula Bharath Sreenivasulu; M. Durga Prakash; Sandip Bhattacharya; D. Nirmal (IEEE Access, 2024)

Revolutionizing Fe doped back barrier AlGaN/GaN HEMTs: Unveiling the remarkable 1700V breakdown voltage milestone. - Binola K. Jebalin; S. Angen Franklin; G. Gifta; P. Prajoon; D. Nirmal (Microelectron. J., 2024)