Oxide reliability below 3 nm for advanced CMOS: Issues, characterization, and solutions. - Didier Goguenheim; D. Pic; Jean-Luc Ogier (Microelectron. Reliab., 2007)

A comprehensive study of stress induced leakage current using a floating gate structure for direct applications in EEPROM memories. - D. Pic; Didier Goguenheim; Jean-Luc Ogier (Microelectron. Reliab., 2007)

Assessment of temperature and voltage accelerating factors for 2.3-3.2 nm SiO2 thin oxides stressed to hard breakdown. - D. Pic; Didier Goguenheim; Jean-Luc Ogier (Microelectron. Reliab., 2008)

Dynamic stress method for accurate NVM oxide robustness evaluation for automotive applications. - D. Pic; Arnaud Régnier; V. Pean; Jean-Luc Ogier; Didier Goguenheim (Microelectron. Reliab., 2008)