David Poppitz

According to our database, David Poppitz authored at least 6 papers between 2015 and 2020.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2020

Reliability Physics of GaN HEMT Microwave Devices: The Age of Scaling.

Enrico Zanoni, Matteo Meneghini, Gaudenzio Meneghesso, Fabiana Rampazzo, Daniele Marcon, Veronica Gao Zhan, Francesca Chiocchetta, Andreas Graff, Frank Altmann, Michél Simon-Najasek, David Poppitz

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2018

Cathodoluminescence spectroscopy for failure analysis and process development of GaN-based microelectronic devices.

C. Monachon, Marcin Stefan Zielinski, J. Berney, D. Poppitz, Andreas Graff, Steffen Breuer, Lutz Kirste

Proceedings of the IEEE International Reliability Physics Symposium, 2018

Physical failure analysis methods for wide band gap semiconductor devices.

Andreas Graff, Michél Simon-Najasek, David Poppitz, Frank Altmann

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2017

Exploring the thermal limit of GaN power devices under extreme overload conditions.

Florian Peter Pribahsnik, Michael Nelhiebel, M. Mataln, Mirko Bernardoni, G. Prechtl, Frank Altmann, David Poppitz, A. Lindemann

Microelectron. Reliab., 2017

2016

Correlation of gate leakage and local strain distribution in GaN/AlGaN HEMT structures.

Mikael Broas, Andreas Graff, Michél Simon-Najasek, David Poppitz, Frank Altmann, Helmut Jung, Hervé Blanck

Microelectron. Reliab., 2016

2015

Focused high- and low-energy ion milling for TEM specimen preparation.

Andriy Lotnyk, D. Poppitz, U. Ross, J. W. Gerlach, F. Frost, S. Bernütz, E. Thelander, B. Rauschenbach

Microelectron. Reliab., 2015