The physical mechanism investigation of off-state drain bias TDDB and its implication in advance HK/MG FinFETs. - I. K. Chen; S. C. Chen; S. Mukhopadhyay; D. S. Huang; J. H. Lee; Y. S. Tsai; Ryan Lu; Jun He (IRPS, 2018)

Comprehensive device and product level reliability studies on advanced CMOS technologies featuring 7nm high-k metal gate FinFET transistors. - D. S. Huang; J. H. Lee; Y. S. Tsai; Y. F. Wang; Y. S. Huang; C. K. Lin; Ryan Lu; Jun He (IRPS, 2018)

Study of dynamic TDDB in scaled FinFET technologies. - Kaustubh Joshi 003; Shu-Wen Chang; D. S. Huang; P. J. Liao; Yung-Huei Lee (IRPS, 2018)

AC TDDB Analysis for HK/IL Gate Stack Breakdown and Frequency-dependent Oxygen Vacancy Trap Generation in Advanced nodes FinFET Devices by SILC Spectrum Methodology. - P. S. Chen; Y. W. Lee; D. S. Huang; S. C. Chen; C. F. Cheng; J. H. Lee; Jun He (IRPS, 2022)

A Comprehensive Hot Carrier Injection with Voltage Ramp Stress (HCI-VRS) through Different Model Verification for More than Moore Diversity Application. - C. H. Chiang; K. P. Sou; D. S. Huang; J. H. Lee (IRPS, 2024)