Gate defects analysis in AlGaN/GaN devices by mean of accurate extraction of the Schottky Barrier Height, electrical modelling, T-CAD simulations and TEM imaging. - Jean-Guy Tartarin; O. Lazar; D. Saugnon; Benoit Lambert; C. Moreau; C. Bouexière; E. Romain-Latu; K. Rousseau; A. David; J.-L. Roux (Microelectron. Reliab., 2017)