Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT. - Carmine Abbate; Giovanni Busatto; Francesco Iannuzzo; S. Mattiazzo; Annunziata Sanseverino; Luca Silvestrin; D. Tedesco; Francesco Velardi (Microelectron. Reliab., 2015)

Experimental study of the instabilities observed in 650 V enhancement mode GaN HEMT during short circuit. - Carmine Abbate; Giovanni Busatto; Annunziata Sanseverino; D. Tedesco; Francesco Velardi (Microelectron. Reliab., 2017)

Progressive drain damage in SiC power MOSFETs exposed to ionizing radiation. - Carmine Abbate; Giovanni Busatto; S. Mattiazzo; Annunziata Sanseverino; Luca Silvestrin; D. Tedesco; Francesco Velardi (Microelectron. Reliab., 2018)

Measure of high frequency input impedance to study the instability of power devices in short circuit. - Carmine Abbate; Giovanni Busatto; Annunziata Sanseverino; D. Tedesco; Francesco Velardi (Microelectron. Reliab., 2018)

Failure analysis of 650 V enhancement mode GaN HEMT after short circuit tests. - Carmine Abbate; Giovanni Busatto; Annunziata Sanseverino; D. Tedesco; Francesco Velardi (Microelectron. Reliab., 2018)