Lg = 130 nm GAA MBCFETs with three-level stacked In0.53Ga0.47As nanosheets. - H.-B. Jo; I.-G. Lee; J.-M. Baek; S. T. Lee; S.-M. Choi; H.-J. Kim; H.-S. Jeong; W.-S. Park; J.-H. Yoo; H.-Y. Lee; D. Y. Yun; S.-W. Son; et al. (VLSI Technology and Circuits, 2022)