Effects of La2O3 incorporation in HfO2 gated nMOSFETs on low-frequency noise. - D. Zade; Soshi Sato; Kuniyuki Kakushima; A. Srivastava; Parhat Ahmet; Kazuo Tsutsui; Akira Nishiyama; Nobuyuki Sugii; Kenji Natori; Takeo Hattori; Chandan Kumar Sarkar; Hiroshi Iwai (Microelectron. Reliab., 2011)