High-performance 1-Gb-NAND flash memory with 0.12-μm technology. - June Lee; Heung-Soo Im; Dae-Seok Byeon; Kyeong-Han Lee; Dong-Hyuk Chae; Kyong-Hwa Lee; Sang Won Hwang; Sung-Soo Lee; Young-Ho Lim; Jae-Duk Lee; Jung-Dal Choi; Young-Il Seo; et al. (IEEE J. Solid State Circuits, 2002)

A 90-nm CMOS 1.8-V 2-Gb NAND flash memory for mass storage applications. - June Lee; Sung-Soo Lee; Oh-Suk Kwon; Kyeong-Han Lee; Dae-Seok Byeon; In-Young Kim; Kyoung-Hwa Lee; Young-Ho Lim; Byung-Soon Choi; Jong-Sik Lee; Wang-Chul Shin; Jeong-Hyuk Choi; et al. (IEEE J. Solid State Circuits, 2003)

19.5 Three-dimensional 128Gb MLC vertical NAND Flash-memory with 24-WL stacked layers and 50MB/s high-speed programming. - Ki-Tae Park; Jin-Man Han; Dae-Han Kim; Sangwan Nam; Kihwan Choi; Minsu Kim 004; Pansuk Kwak; Doosub Lee; Yoon-Hee Choi; Kyung-Min Kang; Myung-Hoon Choi; Dong-Hun Kwak; et al. (ISSCC, 2014)

7.2 A 128Gb 3b/cell V-NAND flash memory with 1Gb/s I/O rate. - Jae-Woo Im; Woopyo Jeong; Doo-Hyun Kim; Sangwan Nam; Dong-Kyo Shim; Myung-Hoon Choi; Hyun-Jun Yoon; Dae-Han Kim; Youse Kim; Hyun Wook Park; Dong-Hun Kwak; Sang-Won Park; et al. (ISSCC, 2015)

7.6 1GB/s 2Tb NAND flash multi-chip package with frequency-boosting interface chip. - Hyun-Jin Kim; Jeong-Don Lim; Jang-Woo Lee; Dae-Hoon Na; Joon-Ho Shin; Chae-Hoon Kim; Seungwoo Yu; Ji-Yeon Shin; Seon-Kyoo Lee; Devraj Rajagopal; Sang-Tae Kim; Kyeong-Tae Kang; et al. (ISSCC, 2015)

Three-Dimensional 128 Gb MLC Vertical nand Flash Memory With 24-WL Stacked Layers and 50 MB/s High-Speed Programming. - Ki-Tae Park; Sangwan Nam; Dae-Han Kim; Pansuk Kwak; Doosub Lee; Yoon-Hee Choi; Myung-Hoon Choi; Dong-Hun Kwak; Doo-Hyun Kim; Minsu Kim 004; Hyun Wook Park; Sang-Won Shim; et al. (IEEE J. Solid State Circuits, 2015)

7.1 256Gb 3b/cell V-NAND flash memory with 48 stacked WL layers. - Dongku Kang; Woopyo Jeong; Chulbum Kim; Doo-Hyun Kim; Yong-Sung Cho; Kyung-Tae Kang; Jinho Ryu; Kyung-Min Kang; Sungyeon Lee; Wandong Kim; Hanjun Lee; Jaedoeg Yu; et al. (ISSCC, 2016)

7.5 A 128Gb 2b/cell NAND flash memory in 14nm technology with tPROG=640µs and 800MB/s I/O rate. - Seungjae Lee 001; Jin-Yub Lee; Il-Han Park; Jong-Yeol Park; Sung-Won Yun; Minsu Kim 004; Jong-Hoon Lee; Min-Seok Kim; Kangbin Lee; Taeeun Kim; Byungkyu Cho; Dooho Cho; et al. (ISSCC, 2016)

A 128 Gb 3b/cell V-NAND Flash Memory With 1 Gb/s I/O Rate. - Woopyo Jeong; Jae-Woo Im; Doo-Hyun Kim; Sangwan Nam; Dong-Kyo Shim; Myung-Hoon Choi; Hyun-Jun Yoon; Dae-Han Kim; Youse Kim; Hyun Wook Park; Dong-Hun Kwak; Sang-Won Park; et al. (IEEE J. Solid State Circuits, 2016)

11.4 A 512Gb 3b/cell 64-stacked WL 3D V-NAND flash memory. - Chulbum Kim; Ji-Ho Cho; Woopyo Jeong; Il-Han Park; Hyun Wook Park; Doo-Hyun Kim; Daewoon Kang; Sunghoon Lee; Ji-Sang Lee; Wontae Kim 004; Jiyoon Park; Yang-Lo Ahn; et al. (ISSCC, 2017)

256 Gb 3 b/Cell V-nand Flash Memory With 48 Stacked WL Layers. - Dongku Kang; Woopyo Jeong; Chulbum Kim; Doo-Hyun Kim; Yong-Sung Cho; Kyung-Tae Kang; Jinho Ryu; Kyung-Min Kang; Sungyeon Lee; Wandong Kim; Hanjun Lee; Jaedoeg Yu; et al. (IEEE J. Solid State Circuits, 2017)

A 1Tb 4b/cell 64-stacked-WL 3D NAND flash memory with 12MB/s program throughput. - Seungjae Lee 001; Chulbum Kim; Minsu Kim 004; Sung-Min Joe; Joonsuc Jang; Seungbum Kim; Kangbin Lee; Jisu Kim; Jiyoon Park; Hanjun Lee; Min-Seok Kim; Seonyong Lee; et al. (ISSCC, 2018)

A 512-Gb 3-b/Cell 64-Stacked WL 3-D-NAND Flash Memory. - Chulbum Kim; Doo-Hyun Kim; Woopyo Jeong; Hyun-Jin Kim; Il-Han Park; Hyun Wook Park; Jong-Hoon Lee; Jiyoon Park; Yang-Lo Ahn; Ji Young Lee; Seungbum Kim; Hyun-Jun Yoon; et al. (IEEE J. Solid State Circuits, 2018)

A 512Gb 3-bit/Cell 3D 6th-Generation V-NAND Flash Memory with 82MB/s Write Throughput and 1.2Gb/s Interface. - Dongku Kang; Minsu Kim 004; Suchang Jeon; Wontaeck Jung; Jooyong Park; Gyo Soo Choo; Dong-Kyo Shim; Anil Kavala; Seungbum Kim; Kyung-Min Kang; Jiyoung Lee; Kuihan Ko; et al. (ISSCC, 2019)

13.1 A 1Tb 4b/cell NAND Flash Memory with tPROG=2ms, tR=110µs and 1.2Gb/s High-Speed IO Rate. - Doo-Hyun Kim; Hyunggon Kim; Sung-Won Yun; Youngsun Song; Jisu Kim; Sung-Min Joe; Kyung-Hwa Kang; Joonsuc Jang; Hyun-Jun Yoon; Kangbin Lee; Minseok Kim; Joonsoo Kwon; et al. (ISSCC, 2020)

A 1.8 Gb/s/pin 16Tb NAND Flash Memory Multi-Chip Package with F-Chip of Toggle 4.0 Specification for High Performance and High Capacity Storage Systems. - Jang-Woo Lee; Dae-Hoon Na; Anil Kavala; Hwasuk Cho; Junha Lee; Manjae Yang; Eunjin Song; Tongsung Kim; Seon-Kyoo Lee; Dong-Su Jang; Byung-Kwan Chun; Youngmin Jo; et al. (VLSI Circuits, 2020)

A 512Gb 3b/Cell 7th -Generation 3D-NAND Flash Memory with 184MB/s Write Throughput and 2.0Gb/s Interface. - Jiho Cho; D. Chris Kang; Jongyeol Park; Sangwan Nam; Jung-Ho Song; Bong-Kil Jung; Jaedoeg Lyu; Hogil Lee; Won-Tae Kim 004; Hongsoo Jeon; Sunghoon Kim 001; In-Mo Kim; et al. (ISSCC, 2021)

A 1.8-Gb/s/Pin 16-Tb NAND Flash Memory Multi-Chip Package With F-Chip for High-Performance and High-Capacity Storage. - Dae-Hoon Na; Jang-Woo Lee; Seon-Kyoo Lee; Hwasuk Cho; Junha Lee; Manjae Yang; Eunjin Song; Anil Kavala; Tongsung Kim; Dong-Su Jang; Youngmin Jo; Ji-Yeon Shin; et al. (IEEE J. Solid State Circuits, 2021)

Cell Operation Technologies to Overcome Scale-down Issues in 3D NAND Flash Memory. - Wandong Kim; Dae-Seok Byeon; Sung-Min Joe; Jinyub Lee; Jai Hyuk Song (ICEIC, 2022)