Extremely scaled silicon nano-CMOS devices. - Leland Chang; Yang-Kyu Choi; Daewon Ha; Pushkar Ranade; Shiying Xiong; Jeffrey Bokor; Chenming Hu; Tsu-Jae King 001 (Proc. IEEE, 2003)

12.2 A 7nm FinFET SRAM macro using EUV lithography for peripheral repair analysis. - Taejoong Song; Hoonki Kim; Woojin Rim; Yongho Kim; Sunghyun Park 003; Changnam Park; Minsun Hong; Giyong Yang; Jeongho Do; Jinyoung Lim; Seungyoung Lee; Ingyum Kim; et al. (ISSCC, 2017)

Prospective Innovation of DRAM, Flash, and Logic Technologies for Digital Transformation (DX) Era. - Daewon Ha; Hyoung-Sub Kim (VLSI Technology and Circuits, 2022)

Improvement of GIDL-assisted Erase by using Surrounded BL PAD Structure for VNAND. - Suhwan Lim; Samki Kim; Changhee Lee; Hyeongwon Choi; Nambin Kim; Jaehun Jung; Hanvit Yang; Tae-Hun Kim; Junhee Lim; Daewon Ha; Sunghoi Hur; Jae-hoon Jang; et al. (IMW, 2023)

Design Framework for Ferroelectric Gate Stack Engineering of Vertical NAND Structures for Efficient TLC and QLC Operation. - Dipjyoti Das; Lance Fernandes; Prasanna Venkatesan Ravindran; Taeyoung Song; Chinsung Park; Nashrah Afroze; Mengkun Tian; Hang Chen; Winston Chem; Kijoon Kim; Jongho Woo; Suhwan Lim; et al. (IMW, 2024)

Exploring Innovative IGZO-channel based DRAM Cell Architectures and Key Technologies for Sub-10nm Node. - Daewon Ha; Y. Lee; Shinjae Yoo; W. Lee; M. H. Cho; K. Yoo; S. M. Lee; S. Lee; M. Terai; T. H. Lee; J. H. Bae; K. J. Moon; et al. (IMW, 2024)

Drain Current Degradation Induced by Charge Trapping/De-Trapping in Fe-FET. - Taeyoung Kim; Suhwan Lim; Ilho Myeong; Sanghyun Park; Suseong Noh; Seung Min Lee; Jongho Woo; Hanseung Ko; Youngji Noh; Moonkang Choi; Kiheun Lee; Sangwoo Han; et al. (IRPS, 2024)

A Comprehensive Study of Read-After-Write-Delay for Ferroelectric VNAND. - Ilho Myeong; Suhwan Lim; Taeyoung Kim; Sanghyun Park; Suseong Noh; Seung Min Lee; Jongho Woo; Hanseung Ko; Youngji Noh; Munkang Choi; Kiheun Lee; Sangwoo Han; et al. (IRPS, 2024)

Low-Damage Processed and High-Pressure Annealed High-k Hafnium Zirconium Oxide Capacitors near Morphotropic Phase Boundary with Record-Low EOT of 2.4Å & high-k of 70 for DRAM Technology. - Venkateswarlu Gaddam; Junghyeon Hwang; Hunbeom Shin; Chaeheon Kim; Giuk Kim; Hyung-Jun Kim; Jooho Lee; Hyun-Cheol Kim; Bumsu Park; Suhwan Lim; Sang Yun Kim; Kwangsoo Kim; et al. (VLSI Technology and Circuits, 2024)

In-depth Analysis of the Hafnia Ferroelectrics as a Key Enabler for Low Voltage & QLC 3D VNAND Beyond 1K Layers: Experimental Demonstration and Modeling. - Giuk Kim; Hyojun Choi; Hunbeom Shin; Sangho Lee; Sangmok Lee; Yunseok Nam; Minhyun Jung; Ilho Myeong; Kijoon Kim; Jongho Woo; Suhwan Lim; Kwangsoo Kim; et al. (VLSI Technology and Circuits, 2024)

Ge(110) GAA Nanosheet / Si(100) Tri-gate Nanosheet Monolithic CFETs Featuring Record-High Hole Mobility. - Seong Kwang Kim; Hyeongrak Lim; Jaeyong Jeong; Young-Keun Park; Jejune Park; Sungil Park; Jaehyun Park; Daewon Ha; Byung Jin Cho; Sanghyeon Kim (VLSI Technology and Circuits, 2024)

Highly Robust All-Oxide Transistors with Ultrathin In2O3 as Channel and Thick In2O3 as Metal Gate Towards Vertical Logic and Memory. - Z. Lin; Z. Zhang; C. Niu; H. Dou; K. Xu; M. Islam; J.-Y. Lin; C. Sung; M. Hong; Daewon Ha; H. Wang; M. A. Alam; et al. (VLSI Technology and Circuits, 2024)

Highly manufacturable Self-Aigned Direct Backside Contact (SA-DBC) and Backside Gate Contact (BGC) for 3-dimensional Stacked FET at 48nm gate pitch. - Jaehyun Park; Juhun Park; Kyuman Hwang; Jinchan Yun; Dahye Kim; Sungil Park; Jejune Park; Jinwook Yang; Jae Won Jeong; Chuljin Yun; Jinho Bae; Sam Park; et al. (VLSI Technology and Circuits, 2024)

Paving the Way for Pass Disturb Free Vertical NAND Storage via A Dedicated and String-Compatible Pass Gate. - Zijian Zhao 001; Sola Woo; Khandker Akif Aabrar; Sharadindu Gopal Kirtania; Zhouhang Jiang; Shan Deng; Yi Xiao 008; Halid Mulaosmanovic; Stefan Dünkel; Dominik Kleimaier; Steven Soss; Sven Beyer; et al. (CoRR, 2024)

Future Technology Outlook on DRAM/Flash Memories for More Moore and More Than Moore. - Su-Jin Ahn; Young Guen Song; Dongguk Cho; Daewon Ha; Wanki Kim; Kwangmin Park; Kwangjin Moon; Jin-Woo Han; Seon Il Shim; Sangjin Hyun; Jaihyuk Song (IMW, 2025)

Comparative Study of Channel Materials for Ferroelectric NAND Applications. - Lance Fernandes; Prasanna Venkatesan Ravindran; Mengkun Tian; Yu-Hsin Kuo; Nashrah Afroze; Salma Soliman; Sanghyun Kang; Dyutimoy Chakraborty; Taeyoung Song; Chengyang Zhang; Kijoon Kim; Kwangyou Seo; et al. (IMW, 2025)

The Opportunity of Anti-ferroelectrics in FeFET for Emerging Non-Volatile Memory Applications. - Hyojun Choi; Giuk Kim; Hunbeom Shin; Yunseok Nam; Sanghun Jeon; Kwangsoo Kim; Suhwan Lim; Jongho Woo; Wanki Kim; Daewon Ha; Jinho Ahn (IRPS, 2025)

Investigating Read-After-Write Delay in Ferroelectric FET with Gate-Side Injection. - Sizhe Ma; Saikat Chakraborty; Yixin Qin; Zijian Zhao 001; Jiahui Duan; Moonyoung Jung; Kijoon Kim; Suhwan Lim; Kwangyou Seo; Kwangsoo Kim; Wanki Kim; Daewon Ha; et al. (IRPS, 2025)

Retention Analysis of Ferroelectric FETs with Gate-Side Injection for Vertical NAND Storage. - Yixin Qin; Saikat Chakraborty; Zijian Zhao 001; Sizhe Ma; Moonyoung Jung; Kijoon Kim; Suhwan Lim; Kwangyou Seo; Kwangsoo Kim; Wanki Kim; Daewon Ha; Vijaykrishnan Narayanan; et al. (IRPS, 2025)

Enhanced Memory Performance in Ferroelectric NAND Applications: The Role of Tunnel Dielectric Position for Robust 10-Year Retention. - Prasanna Venkatesan Ravindran; Andrea Padovani; Lance Fernandes; Priyankka Gundlapudi Ravikumar; Chinsung Park; Huy Tran; Zekai Wang; Hari Jayasankar; Amrit Garlapati; Taeyoung Song; Hang Chen; Winston Chern; et al. (IRPS, 2025)

Modeling Dynamic Interplay Between Charge Traps and Polarization for Memory Window Enhancement in Gate Injection Layers. - Minji Shon; Chinsung Park; Prasanna Venkatesan Ravindran; Lance Fernandes; Kijoon Kim; Jongho Woo; Suhwan Lim; Kwangsoo Kim; Wanki Kim; Daewon Ha; Suman Datta; Asif Khan; et al. (IRPS, 2025)

An In-Situ Spatial-Temporal Sequence Detector for Neuromorphic Vision Sensor Empowered by High Density Vertical NAND Storage. - Zijian Zhao 001; Varun Darshana Parekh; Po-Kai Hsu; Yixin Qin; Yiming Song; A. N. M. Nafiul Islam; Ningyuan Cao; Siddharth Joshi 001; Thomas Kämpfe; Moonyoung Jung; Kwangyou Seo; Kwangsoo Kim; et al. (CoRR, 2025)