Investigation of Poly Silicon Channel Variation in Vertical 3D NAND Flash Memory. - Inyoung Lee; Dae Hwan Kim; Daewoong Kang; Il Hwan Cho (IEEE Access, 2022)

3D NAND Flash Memory Cell Current and Interference Characteristics Improvement With Multiple Dielectric Spacer. - Yun-Jae Oh; Inyoung Lee; Yunejae Suh; Daewoong Kang; Il Hwan Cho (IEEE Access, 2023)

Improvement of Retention Characteristics Using Doped SiN Layer Between WL Spaces in 3D NAND Flash. - Hyewon Kyung; Yunejae Suh; Youngho Jung; Daewoong Kang (IEEE Access, 2024)

A Novel Structure Between WL Spaces to Improve the Retention Characteristics in 3D NAND Flash. - Yunejae Suh; Hyewon Kyung; Youngho Jung; Daewoong Kang (IEEE Access, 2024)

Development of High Density 3D NAND Flash Memory Using New Scaling Technologies for AI Semiconductor. - Daewoong Kang; Minkyo Suh; Gwansun Choi; Chaeyeon Jung (ICCE, 2025)

Improvement of Erase Performance Using p-Type Gate in IGZO Channel-Based 3D NAND Flash. - Minkyo Suh; Youngho Jung; Daewoong Kang (IEEE Access, 2025)