Technology and properties of a vector hall sensor. - Dagmar Gregusová; Peter Eliás 002; Z. Öszi; Róbert Kúdela; Ján Soltýs; Ján Fedor; Vladimír Cambel; Ivan Kostic (Microelectron. J., 2006)

Optimization and performance of Al2O3/GaN metal-oxide-semiconductor structures. - Karol Cico; Ján Kuzmík; Dagmar Gregusová; Roman Stoklas; Tibor Lalinsky; Alexandros G. Georgakilas; Dionyz Pogany; Karol Fröhlich (Microelectron. Reliab., 2007)

High-temperature performance of AlGaN/GaN HFETs and MOSHFETs. - D. Donoval; Martin Florovic; Dagmar Gregusová; Jaroslav Kovác; Peter Kordos (Microelectron. Reliab., 2008)

High resolution physical analysis of ohmic contact formation at GaN-HEMT devices. - Andreas Graff; Michél Simon-Najasek; Frank Altmann; Ján Kuzmík; Dagmar Gregusová; S. Hascik; Helmut Jung; T. Baur; Jan Grünenpütt; Hervé Blanck (Microelectron. Reliab., 2017)

Device and circuit models of InAlN/GaN D- and dual-gate E-mode HEMTs for design and characterisation of monolithic NAND logic cell. - Ales Chvála; Lukás Nagy; Juraj Marek; Juraj Priesol; Daniel Donoval; Alexander Satka; Michal Blaho; Dagmar Gregusová; Ján Kuzmík (DTIS, 2018)

Device and Circuit Models of Monolithic InAlN/GaN NAND and NOR Logic Cells Comprising D- and E-Mode HEMTs. - Ales Chvála; Lukás Nagy; Juraj Marek; Juraj Priesol; Daniel Donoval; Alexander Satka; Michal Blaho; Dagmar Gregusová; Ján Kuzmík (J. Circuits Syst. Comput., 2019)