A 120mm2 16Gb 4-MLC NAND Flash Memory with 43nm CMOS Technology. - Kazushige Kanda; Masaru Koyanagi; Toshio Yamamura; Koji Hosono; Masahiro Yoshihara; Toru Miwa; Yosuke Kato; Alex Mak; Siu Lung Chan; Frank Tsai; Raul Cernea; Binh Le; et al. (ISSCC, 2008)

A 151mm2 64Gb MLC NAND flash memory in 24nm CMOS technology. - Koichi Fukuda; Yoshihisa Watanabe; Eiichi Makino; Koichi Kawakami; Jumpei Sato; Teruo Takagiwa; Naoaki Kanagawa; Hitoshi Shiga; Naoya Tokiwa; Yoshihiko Shindo; Toshiaki Edahiro; Takeshi Ogawa; et al. (ISSCC, 2011)

A 151-mm2 64-Gb 2 Bit/Cell NAND Flash Memory in 24-nm CMOS Technology. - Koichi Fukuda; Yoshihisa Watanabe; Eiichi Makino; Koichi Kawakami; Jumpei Sato; Teruo Takagiwa; Naoaki Kanagawa; Hitoshi Shiga; Naoya Tokiwa; Yoshihiko Shindo; Takeshi Ogawa; Toshiaki Edahiro; et al. (IEEE J. Solid State Circuits, 2012)

A 1.33Tb 4-bit/Cell 3D-Flash Memory on a 96-Word-Line-Layer Technology. - Noboru Shibata; Kazushige Kanda; Takahiro Shimizu; Jun Nakai; Osamu Nagao; Naoki Kobayashi 004; Makoto Miakashi; Yasushi Nagadomi; Takeshi Nakano; Takahisa Kawabe; Taira Shibuya; Mario Sako; et al. (ISSCC, 2019)

A 1.33-Tb 4-Bit/Cell 3-D Flash Memory on a 96-Word-Line-Layer Technology. - Noboru Shibata; Takahisa Kawabe; Taira Shibuya; Mario Sako; Kosuke Yanagidaira; Toshifumi Hashimoto; Hiroki Date; Manabu Sato; Tomoki Nakagawa; Junji Musha; Takatoshi Minamoto; Kazushige Kanda; et al. (IEEE J. Solid State Circuits, 2020)

A 1Tb 3b/Cell 3D-Flash Memory of more than 17Gb/mm2 bit density with 3.2Gbps interface and 205MB/s program throughput. - Mario Sako; T. Nakajima; Fumihiro Kono; Takeshi Nakano; Masaki Fujiu; Junji Musha; Dai Nakamura; Naoaki Kanagawa; Yutaka Shimizu; Kosuke Yanagidaira; Tetsuaki Utsumi; T. Kawano; et al. (VLSI Technology and Circuits, 2023)