On MX2-based metal-oxide-semiconductor device capacitance-voltage characteristics and dual-gate operation. - Dennis Lin; Xiangyu Wu; Vivek Mootheri; Daire Cott; Benjamin Groven; Pierre Morin; Inge Asselberghs; Iuliana P. Radu (DRC, 2021)

Graphene electro-absorption modulators integrated at wafer-scale in a CMOS fab. - Cheng Han Wu; Steven Brems; Didit Yudistira; Daire Cott; A. Milenin; Kevin Vandersmissen; A. Maestre; A. Centeno; Joris Van Campenhout; Cedric Huyghebaert; Marianna Pantouvaki (VLSI Circuits, 2021)

Analysis of BTI in 300 mm integrated dual-gate WS2 FETs. - L. Panarella; Quentin Smets; Devin Verreck; Tom Schram; Daire Cott; I. Asselberghs; Ben Kaczer (DRC, 2022)

Impact of gate stack processing on the hysteresis of 300 mm integrated WS2 FETs. - L. Panarella; Ben Kaczer; Quentin Smets; Devin Verreck; Tom Schram; Daire Cott; Dennis Lin; Stanislav Tyaginov; I. Asselberghs; Cesar J. Lockhart de la Rosa; Gouri Sankar Kar; Valeri Afanas'ev (IRPS, 2023)

Integration of epitaxial monolayer MX₂ channels on 300mm wafers via Collective-Die-To-Wafer (CoD2W) transfer. - Souvik Ghosh 001; Quentin Smets; S. Banerjee; Tom Schram; Koen Kennes; R. Verheyen; P. Kumar; M.-E. Boulon; Benjamin Groven; H. M. Silva; Shreya Kundu; Daire Cott; et al. (VLSI Technology and Circuits, 2023)

Towards low damage and fab-compatible top-contacts in MX2 transistors using a combined synchronous pulse atomic layer etch and wet-chemical etch approach. - Shreya Kundu; D. H. van Doip; Tom Schram; Quentin Smets; S. Banerjee; Benjamin Groven; Daire Cott; Stefan Decoster; P. Bezard; F. Lazzarino; K. Banerjee; Souvik Ghosh 001; et al. (VLSI Technology and Circuits, 2023)