Nonvolatile Memory With Extremely Low-Leakage Indium-Gallium-Zinc-Oxide Thin-Film Transistor. - Hiroki Inoue; Takanori Matsuzaki; Shuhei Nagatsuka; Yutaka Okazaki; Toshinari Sasaki; Kousei Noda; Daisuke Matsubayashi; Takahiko Ishizu; Tatsuya Onuki; Atsuo Isobe; Yutaka Shionoiri; Kiyoshi Kato; et al. (IEEE J. Solid State Circuits, 2012)

A 20ns-write 45ns-read and 1014-cycle endurance memory module composed of 60nm crystalline oxide semiconductor transistors. - Shuhei Maeda; Satoru Ohshita; Kazuma Furutani; Yuto Yakubo; Takahiko Ishizu; Tomoaki Atsumi; Yoshinori Ando; Daisuke Matsubayashi; Kiyoshi Kato; Takashi Okuda; Masahiro Fujita; Shunpei Yamazaki (ISSCC, 2018)

Accurate off-current evaluation by parasitic capacitance extraction in capacitor-less DRAM cells. - Daisuke Matsubayashi; Subhali Subhechha; Hyungrock Oh; Nouredine Rassoul; Shamin Houshmand Sharifi; Yiqun Wan; Shreya Kundu; Harinarayanan Puliyalil; Harold Dekkers; Alexandru Pavel; Inhee Lee 004; Gouri Sankar Kar; et al. (IMW, 2025)