Measurement considerations for evaluating BTI effects in SiC MOSFETs. - Daniel B. Habersat; Aivars J. Lelis; Ronald Green (Microelectron. Reliab., 2018)

Permanent and Transient Effects of High-Temperature Bias Stress on Room- Temperature $V_{T}$ Drift Measurements in SiC Power MOSFETs. - Daniel B. Habersat; Ronald Green; Aivars J. Lelis (IRPS, 2019)

Towards a Robust Approach to Threshold Voltage Characterization and High Temperature Gate Bias Qualification. - Daniel B. Habersat; Aivars J. Lelis; Ronald Green (IRPS, 2020)

Dynamic On-State Resistance in SiC MOSFETs. - Ronald Green; Aivars J. Lelis; Damian Urciuoli; Erik Schroen; Daniel B. Habersat (IRPS, 2023)

NUV-Enhanced 4H-SiC SACM APDs. - Jonathan Schuster; Michael A. Derenge; Jeremy L. Smith; Gregory A. Garrett; Daniel B. Habersat; Brenda VanMil; Dina M. Bower; Shahid Aslam; Tilak Hewagama; Michael Wraback; Anand V. Sampath (DRC, 2024)