Fault isolation of short defect in through silicon via (TSV) based 3D-IC. - Daniel H. Jung; Jonghyun Cho; Heegon Kim; Jonghoon J. Kim; Hongseok Kim; Joungho Kim; Hyun-Cheol Bae; Kwang-Seong Choi (3DIC, 2013)

Eye-diagram simulation and analysis of a high-speed TSV-based channel. - Heegon Kim; Jonghyun Cho; Jonghoon J. Kim; Daniel H. Jung; Sumin Choi; Joungho Kim; Junho Lee; Kunwoo Park (3DIC, 2013)

Non-contact wafer-level TSV connectivity test methodology using magnetic coupling. - Jonghoon J. Kim; Heegon Kim; Sukjin Kim; Bumhee Bae; Daniel H. Jung; Sunkyu Kong; Joungho Kim; Junho Lee; Kunwoo Park (3DIC, 2013)

Modeling and analysis of open defect in through silicon via (TSV) channel. - Daniel H. Jung; Heegon Kim; Jonghoon J. Kim; Joungho Kim; Hyun-Cheol Bae; Kwang-Seong Choi (EMC Compo, 2013)

Design and measurement of a compact on-interposer passive equalizer for chip-to-chip high-speed differential signaling. - Heegon Kim; Jonghyun Cho; Daniel H. Jung; Jonghoon J. Kim; Sumin Choi; Joungho Kim; Junho Lee; Kunwoo Park (EMC Compo, 2013)

Design of contactless wafer-level TSV connectivity testing structure using capacitive coupling. - Jonghoon J. Kim; Heegon Kim; Sukjin Kim; Bumhee Bae; Daniel H. Jung; Sunkyu Kong; Joungho Kim; Junho Lee; Kunwoo Park (EMC Compo, 2013)

Fault detection and isolation of multiple defects in through silicon via (TSV) channel. - Daniel H. Jung; Heegon Kim; Jonghoon J. Kim; Sukjin Kim; Joungho Kim; Hyun-Cheol Bae; Kwang-Seong Choi (3DIC, 2014)

Magnetically-coupled current probing structure consisting of TSVs and RDLs in 2.5D and 3D ICs. - Jonghoon J. Kim; Bumhee Bae; Sukjin Kim; Sunkyu Kong; Heegon Kim; Daniel H. Jung; Joungho Kim (3DIC, 2014)

Crosstalk-included eye-diagram estimation for high-speed silicon, organic, and glass interposer channels on 2.5D/3D IC. - Sumin Choi; Heegon Kim; Daniel H. Jung; Jonghoon J. Kim; Jaemin Lim; Hyunsuk Lee; Kyungjun Cho; Joungho Kim; Hyungsoo Kim; Yong-Ju Kim; Yunsaing Kim (3DIC, 2015)

Modeling and analysis of defects in through silicon via channel for non-invasive fault isolation. - Daniel H. Jung; Heegon Kim; Jonghoon J. Kim; Sukjin Kim; Joungho Kim; Hyun-Cheol Bae; Kwang-Seong Choi (3DIC, 2015)

TSV-based current probing structure using magnetic coupling in 2.5D and 3D IC. - Jonghoon J. Kim; Daniel H. Jung; Heegon Kim; Sunkyu Kong; Sumin Choi; Jaemin Lim; Joungho Kim (EMC Compo, 2015)

Shielding structures for through silicon via (TSV) to active circuit noise coupling in 3D IC. - Jaemin Lim; Manho Lee; Daniel H. Jung; Jonghoon J. Kim; Sumin Choi; Hyunsuk Lee; Joungho Kim (EMC Compo, 2015)

High-Frequency Temperature-Dependent Through-Silicon-Via (TSV) Model and High-Speed Channel Performance for 3-D ICs. - Manho Lee; Daniel H. Jung; Heegon Kim; Jonghyun Cho; Joungho Kim (IEEE Des. Test, 2016)