Active defects in MOS devices on 4H-SiC: A critical review. - Hamid Amini Moghadam; Sima Dimitrijev; Jisheng Han; Daniel Haasmann (Microelectron. Reliab., 2016)

Fast Near-Interface Traps in 4H-SiC MOS Capacitors Measured by an Integrated-Charge Method. - Mayank Chaturvedi; Sima Dimitrijev; Hamid Amini Moghadam; Daniel Haasmann; Peyush Pande; Utkarsh Jadli (IEEE Access, 2021)

Circuit-Specific and Technology-Independent Criterion for Selection of Power MOSFETs That Minimize Energy Dissipation. - Vikas Joshi; Utkarsh Jadli; Peyush Pande; Mayank Chaturvedi; Daniel Haasmann; Sima Dimitrijev (IEEE Access, 2023)

A Method and Criterion for Repetitive Surge Current in Silicon Carbide Schottky Diodes. - Jenny Damcevska; Sima Dimitrijev; Daniel Haasmann; Philip Tanner (IEEE Access, 2025)