Avalanche photodiode with sectional InGaAsP/InP charge layer. - Daniel Hasko; Jaroslav Kovác; F. Uherek; Jaroslava Skriniarová; J. Jakabovic; L. Peternai (Microelectron. J., 2006)

Preparation and properties of thin parylene layers as the gate dielectrics for organic field effect transistors. - J. Jakabovic; Jaroslav Kovác; Martin Weis; Daniel Hasko; R. Srnánek; Peter Valent; Roland Resel (Microelectron. J., 2009)